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SFH6106-3 Integrated Circuit Chip Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS

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SFH6106-3 Integrated Circuit Chip Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS

Brand Name : Anterwell
Model Number : SFH6106-3
Certification : new & original
Place of Origin : original factory
MOQ : 10pcs
Price : Negotiate
Payment Terms : T/T, Western Union, Paypal
Supply Ability : 8600pcs
Delivery Time : 1 day
Packaging Details : Please contact me for details
Reverse voltage : 6.0 V
DC Forward current : 60 mA
Surge forward current : 2.5 A
Junction temperature : 100 °C
Storage temperature range : - 55 to + 150 °C
Soldering temperature : 260 °C
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SFH610A / SFH6106

Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS


• Good CTR Linearity Depending on Forward Current

• Isolation Test Voltage, 5300 VRMS

• High Collector-Emitter Voltage, VCEO = 70 V

• Low Saturation Voltage

• Fast Switching Times

• Low CTR Degradation

• Temperature Stable

• Low Coupling Capacitance

• End-Stackable, 0.100" (2.54 mm) Spacing

• High Common-Mode Interference Immunity

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E52744 System Code H or J, Double Protection

• DIN EN 60747-5-2 (VDE0884)

DIN EN 60747-5-5 pending

Available with Option 1

• CSA 93751

• BSI IEC60950 IEC60065


The SFH610A (DIP) and SFH6106 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing.

Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change.

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.


ParameterTest conditionSymbolValueUnit
Reverse voltageVR6.0V
DC Forward currentIF60mA
Surge forward currentt ≤ 10 µsIFSM2.5A
Power dissipationPdiss100mW


ParameterTest conditionSymbolValueUnit
Collector-emitter voltageVCE70V
Emitter-collector voltageVEC7.0V
Collector currentIC50mA
t ≤ 1.0 msIC100mA
Power dissipationPdiss150mW


ParameterTest conditionSymbolValueUnit
Isolation test voltage between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74VISO5300VRMS
Creepage≥ 7.0mm
Clearance≥ 7.0mm
Insulation thickness between emitter and detector≥ 0.4mm
Comparative Tracking index per DIN IEC 112/VDEO 303, part 1≥ 175
Isolation resistanceVIO = 500 V, Tamb = 25 °CRIO≥ 1012Ω
VIO = 500 V, Tamb = 100 °CRIO≥ 1011Ω
Storage temperature rangeTstg- 55 to + 150°C
Ambient temperature rangeTamb- 55 to + 100°C
Junction temperatureTj100°C
Soldering temperaturemax. 10 s. dip soldering distance to seating plane ≥ 1.5 mmTsld260°C

Package Dimensions in Inches (mm)

Product Tags:

electronic integrated circuit


digital integrated circuits

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